NAND04G-B2D, NAND08G-BxC
4 Gbit, 8 Gbit, 2112 byte/1056 word page
multiplane architecture, 1.8 V or 3 V, NAND Flash memories
Preliminary Data
Features
■
High density NAND Flash Memory
– Up to 8 Gbit memory array
– Cost-effective solution for mass storage
applications
■
NAND interface
– x8 or 16x bus width
– Multiplexed address/data
■
Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
LGA
Supply voltage: 1.8 V or 3.0 V device
■
TSOP48 12 x 20 mm (N)
■
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
r
■
Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
■
ONFI 1.0 compliant command set
■
Data integrity
– 100 000 program/erase cycles (with ECC
(error correction code))
– 10 years data retention
■
ECOPACK® packages
Block size
– x8 device: (128K + 4 K spare) bytes
– x16 device: (64K + 2 K spare) words
■
LGA52 12 x 17 mm (ZL)
■
■
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic error
detection code (EDC)
■
Device Summary
Reference
Part number
NAND04GR3B2D
NAND04G-B2D
Cache read mode
■
Table 1.
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks):
1.5 ms (typ)
NAND04GW3B2D
NAND04GR4B2D(1)
NAND04GW4B2D(1)
NAND08GR3B2C,
NAND08GW3B2C
NAND08G-BxC
NAND08GR4B2C(1)
■
Status Register
■
Electronic signature
NAND08GR3B4C
■
Chip Enable ‘don’t care’
NAND08GW3B4C
■
Serial number option
September 2007
NAND08GW4B2C(1)
1. x16 organization only available for MCP products.
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/69
www.st.com
1
