2SC2710
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT process)
2SC2710
For Audio Amplifier Applications
Unit: mm
•
High DC current gain: hFE (1) = 100~320
•
Complementary to 2SA1150
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
160
mA
Collector power dissipation
PC
300
mW
Junction temperature
Tj
150
°C
Tstg
−55~150
°C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1A
operating temperature/current/voltage, etc.) are within the
Weight: 0.13 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 35 V, IE = 0
⎯
⎯
0.1
μA
Emitter cut-off current
IEBO
VEB = 5 V, IC = 0
⎯
⎯
0.1
μA
V (BR) CEO
IC = 10 mA, IB = 0
30
⎯
⎯
V
VCE = 1 V, IC = 100 mA
100
⎯
320
hFE (2)
VCE = 1 V, IC = 700 mA
35
⎯
⎯
VCE (sat)
IC = 500 mA, IB = 20 mA
⎯
⎯
0.5
V
Collector-emitter breakdown voltage
hFE (1)
DC current gain
Collector-emitter saturation voltage
(Note)
Base-emitter voltage
VBE
VCE = 1 V, IC = 10 mA
0.5
⎯
0.8
V
Transition frequency
fT
VCE = 5 V, IC = 10 mA
⎯
120
⎯
MHz
VCB = 10 V, IE = 0, f = 1 MHz
⎯
13
⎯
pF
Collector output capacitance
Cob
Note: hFE (1) classification O: 100~200, Y: 160~320
1
2007-11-01