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STL10DN15F3
STL10DN15F3 N-channel 150 V, 0.20 Ω typ., 2.8 A STripFET™ III Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Features Order code VDS@ TJmax RDS(on) max ID STL10DN15F3 150 V <0.22 Ω 2.8 A ■ Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■ Very low thermal resistance ■ Low on-resistance PowerFLATTM 5x6 double island Applications ■ Figure 1. Switching applications Internal schematic diagram Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. Table 1. Device summary Order code Marking Package Packaging STL10DN15F3 10DN15F3 PowerFLAT™ 5x6 double island Tape and reel October 2012 This is information on a product in full production. Doc ID 023781 Rev 1 1/14 www.st.com 14
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