CUS05F30
TOSHIBA Diode
Silicon Epitaxial Schottky Barrier Type
CUS05F30
High-Speed Switching Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Average forward current
IO
500 *
mA
Surge current (10ms)
IFSM
5
A
Junction temperature
Tj
125
°C
Tstg
−55 to 125
°C
Storage temperature range
*: Mounted on a glass-epoxy circuit board of 20 mm× 20 mm,
pad dimensions of 4 mm× 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
USC
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
―
reliability significantly even if the operating conditions (i.e. operating
JEITA
―
temperature/current/voltage, etc.) are within the absolute maximum
TOSHIBA
1-1E1A
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Weight: 4.5 mg (typ.)
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
Characteristic
―
VF (2)
Min
Typ.
Max
IF = 10mA
―
0.23
―
―
IF = 100mA
―
0.31
―
VF (3)
―
IF = 500mA
―
0.38
0.45
Reverse current
IR
―
VR = 30V
―
5
50
μA
Total capacitance
CT
―
VR = 0 V, f = 1 MHz
⎯
120
⎯
pF
Forward voltage
Marking
Test Condition
Unit
V
Equivalent Circuit (Top View)
HP
1
2009-11-24