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部品型式

CUS05F30,H3FT

製品説明
仕様・特性

CUS05F30 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type CUS05F30 High-Speed Switching Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Reverse voltage VR 30 V Average forward current IO 500 * mA Surge current (10ms) IFSM 5 A Junction temperature Tj 125 °C Tstg −55 to 125 °C Storage temperature range *: Mounted on a glass-epoxy circuit board of 20 mm× 20 mm, pad dimensions of 4 mm× 4 mm. Note: Using continuously under heavy loads (e.g. the application of high USC temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEDEC ― reliability significantly even if the operating conditions (i.e. operating JEITA ― temperature/current/voltage, etc.) are within the absolute maximum TOSHIBA 1-1E1A ratings. Please design the appropriate reliability upon reviewing the Toshiba Weight: 4.5 mg (typ.) Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Symbol Test Circuit VF (1) Characteristic ― VF (2) Min Typ. Max IF = 10mA ― 0.23 ― ― IF = 100mA ― 0.31 ― VF (3) ― IF = 500mA ― 0.38 0.45 Reverse current IR ― VR = 30V ― 5 50 μA Total capacitance CT ― VR = 0 V, f = 1 MHz ⎯ 120 ⎯ pF Forward voltage Marking Test Condition Unit V Equivalent Circuit (Top View) HP 1 2009-11-24

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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