Si1016X
Vishay Siliconix
Complementary N- and P-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
350
1.2 at VGS = - 4.5 V
- 400
1.6 at VGS = - 2.5 V
- 300
2.7 at VGS = - 1.8 V
- 20
500
1.25 at VGS = 1.8 V
P-Channel
600
0.85 at VGS = 2.5 V
20
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFETs
• 2000 V ESD Protection
• Very Small Footprint
• High-Side Switching
• Low On-Resistance:
N-Channel, 0.7
P-Channel, 1.2
• Low Threshold: ± 0.8 V (Typ.)
• Fast Switching Speed: 14 ns
• 1.8 V Operation
• Compliant to RoHS Directive 2002/95/EC
ID (mA)
0.70 at VGS = 4.5 V
N-Channel
RDS(on) ()
- 150
BENEFITS
SOT-563
SC-89
S1
1
6
D1
G1
2
5
G2
D2
3
4
•
•
•
•
•
S2
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
Marking Code: A
APPLICATIONS
• Replace Digital Transistor, Level-Shifter
• Battery Operated Systems
• Power Supply Converter Circuits
Top V iew
Ordering Information: Si1016X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
N-Channel
Parameter
Symbol
Drain-Source Voltage
TA = 25 °C
TA = 85 °C
Pulsed Drain Currentb
TA = 25 °C
TA = 85 °C
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
IS
PD
Steady State
Unit
V
±6
515
485
- 390
- 370
370
350
- 280
- 265
IDM
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
ID
5s
- 20
VGS
Continuous Drain Current (TJ = 150 °C)a
P-Channel
Steady State
20
VDS
Gate-Source Voltage
5s
650
mA
- 650
450
380
- 450
- 380
280
250
280
250
145
130
145
130
mW
TJ, Tstg
- 55 to 150
°C
ESD
2000
V
Notes:
a. Surface mounted on FR4 board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71168
S10-2432-Rev. E, 25-Oct-10
www.vishay.com
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