MOTOROLA
Order this document
by BC212/D
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
BC212,B
PNP Silicon
BC213
BC214
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
2
Symbol
BC
212
BC
213
BC
214
Unit
Collector – Emitter Voltage
VCEO
–50
–30
–30
Vdc
Collector – Base Voltage
VCBO
–60
–45
–45
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
350
2.8
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.0
8.0
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
°C/W
Thermal Resistance, Junction to Case
RqJC
125
3
°C/W
Rating
Operating and Storage Junction
Temperature Range
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
BC212
BC213
BC214
V(BR)CEO
–50
–30
–30
—
—
—
—
—
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mA, IE = 0)
BC212
BC213
BC214
V(BR)CBO
–60
–45
–45
—
—
—
—
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
BC212
BC213
BC214
V(BR)EBO
–5
–5
–5
—
—
—
—
—
—
Vdc
Collector–Emitter Leakage Current
(VCB = –30 V)
BC212
BC213
BC214
ICBO
—
—
—
—
—
—
–15
–15
–15
nAdc
Emitter–Base Leakage Current
(VEB = –4.0 V, IC = 0)
BC212
BC213
BC214
IEBO
—
—
—
—
—
—
–15
–15
–15
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
© Motorola, Inc. 1996
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