SSM6J214FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J214FE
○ Power Management Switch Applications
•
•
Unit: mm
1.8 V drive
Low ON-resistance: RDS(ON) = 149.6 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 77.6 mΩ (max) (@VGS = -2.5 V)
RDS(ON) = 57.0 mΩ (max) (@VGS = -4.5 V)
RDS(ON) = 50.0 mΩ (max) (@VGS = -10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
-30
V
Gate-source voltage
VGSS
± 12
V
DC
ID (Note 1)
-3.6
Pulse
IDP (Note 1)
-7.2
Drain current
Power dissipation
PD (Note 2)
500
t = 10s
700
A
1,2,5,6 ： Drain
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
3
ES6
JEDEC
： Gate
4
： Source
―
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-2N1J
temperature, etc.) may cause this product to decrease in the
Weight: 3 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: The channel temperature should not exceed 150°C during use.
Note 2: Mounted on FR4 board.
2
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm )
Marking (Top View)
6
5
Equivalent Circuit
4
6
5
4
3
1
2
3
PT
1
2
Start of commercial production
2011-01
1
2014-03-01
