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2SK3074
2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER Unit in mm (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. Output Power : PO ≥ 630mW Power Gain : GP ≥ 14.9dB Drain Efficiency : ηD ≥ 45% ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS 25 V ID 1 A PD (Note 1) 3 W Channel Temperature Tch 150 °C Storage Temperature Range Tstg −45~150 °C Drain Current Drain Power Dissipation Note: JEDEC — JEITA SC−62 TOSHIBA 2−5K1D Weight: 0.05 g (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB MARKING Part No. (or abbreviation code) W Lot No. 1 A 2 3 A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1. Gate 2. Source 3. Drain Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 1 2007-11-01
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