2N6728
2N6729
2N6730
PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 1 MARCH 94
FEATURES
* 100 Volt VCEO
* Gain of 20 at IC = 0.5 Amp
* Ptot=1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL 2N6728
Collector-Base Voltage
VCBO
-60
2N6729
-80
2N6730
-100
UNIT
V
Collector-Emitter Voltage
VCEO
-60
-80
-100
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb= 25°C
Ptot
1
W
-55 to +200
Operating and Storage Temperature Range Tj:Tstg
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
2N6728
2N6729
2N6730
UNIT CONDITIONS.
MIN. MAX MIN. MAX MIN. MAX
Collector-Base
Breakdown Voltage
V(BR)CBO
-60
-80
-100
V
IC=-0.1mA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-60
-80
-100
V
IC=-1mA, IB=0*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-5
-5
-5
V
IE=-1mA, IC=0
Collector Cut-Off
Current
ICBO
-1
-1
µA
µA
µA
VCB=-60V, IE=0
VCB=-80V, IE=0
VCB=-100V, IE=0
Emitter Cut-Off
Current
IEBO
-1
-1
-1
µA
VEB=-5V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
-0.5
-0.35
-0.5
-0.35
-0.5 V
-0.35
IC=-250mA,IB=-10mA*
IC=-250mA,IB=-25mA*
Base-Emitter
Turn-On Voltage
VBE(on)
-1.2
-1.2
-1.2
IC=-250mA, VCE=-1V*
Static Forward
Current Transfer
Ratio
hFE
80
50
20
250
80
50
20
250
80
50
20
250
Transition
Frequency
fT
50
500
50
500
50
500
MHz IC=-50mA, VCE=-10V
Collector Base
Capacitance
CCB
30
pF
-1
30
30
3-9
V
IC=-50mA, VCE=-1V*
IC=-250mA, VCE=-1V*
IC=-500mA, VCE=-1V*
VCE=-10V, f=1MHz