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TK58E06N1

製品説明
仕様・特性

TK58E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK58E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 4.4 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source TO-220 25 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit V Drain-source voltage VDSS 60 Gate-source voltage VGSS ±20 (Note 1), (Note 2) ID 105 (Note 1), (Note 3) ID 58 (Note 1) IDP 268 PD 110 W EAS 158 mJ IAR 58 A  Drain current (DC) (Silicon limit) Drain current (DC) Drain current (pulsed) Power dissipation (t = 1 ms) (Tc = 25) Single-pulse avalanche energy (Note 4) Avalanche current A Channel temperature Tch 150 Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 1 2012-06 2014-06-30 Rev.5.0

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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