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MT16HTF51264HZ-800C1

製品説明
仕様・特性

1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTF12864HZ – 1GB MT16HTF25664HZ – 2GB MT16HTF51264HZ – 4GB Features Figure 1: 200-Pin SODIMM (MO-224 R/C E) • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 1GB (128 Meg x 64), 2GB (256 Meg x 64) or 4GB (512 Meg x 64) • VDD = VDDQ = 1.8V • VDDSPD = 1.7–3.6V • JEDEC-standard 1.8V I/O (SSTL_18-compatible) • Differential data strobe (DQS, DQS#) option • 4n-bit prefetch architecture • Multiple internal device banks for concurrent operation • Programmable CAS latency (CL) • Posted CAS additive latency (AL) • WRITE latency = READ latency - 1 tCK • Programmable burst lengths (BL): 4 or 8 • Adjustable data-output drive strength • 64ms, 8192-cycle refresh • On-die termination (ODT) • Halogen-free • Serial presence detect (SPD) with EEPROM • Gold edge contacts • Dual rank Module Height: 30mm (1.181 in.) Options Marking • Operating temperature – Commercial (0°C ≤ TA ≤ +70°C) – Industrial (–40°C ≤ TA ≤ +85°C)1 • Package – 200-pin DIMM (halogen-free) • Frequency/CL2 – 1.87ns @ CL = 7 (DDR2-1066) – 2.5ns @ CL = 5 (DDR2-800) – 2.5ns @ CL = 6 (DDR2-800) – 3ns @ CL = 5 (DDR2-667) Notes: None I Z -1GA -80E -800 -667 1. Contact Micron for industrial temperature module offerings. 2. CL = CAS (READ) latency. 3. Not recommended for new designs. Table 1: Key Timing Parameters Data Rate (MT/s) Speed Grade Industry Nomenclature CL = 7 CL = 6 CL = 5 CL = 4 CL = 3 (ns) tRP (ns) tRC (ns) -1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125 -80E PC2-6400 800 800 533 400 12.5 12.5 57.5 -800 PC2-6400 800 667 533 400 15 15 60 -667 PC2-5300 – 667 553 400 15 15 60 -53E PC2-4200 – – 553 400 15 15 55 -40E PC2-3200 – – 400 400 15 15 55 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2008 Micron Technology, Inc. All rights reserved. PDF: 09005aef8339ef97 htf16c128_256_512x64hz.pdf - Rev. C 9/10 EN tRCD Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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