RN2201~RN2206
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2201,RN2202,RN2203
RN2204,RN2205,RN2206
Unit: mm
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1201~RN1206
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2201
4.7
4.7
RN2202
10
10
RN2203
22
22
RN2204
47
47
RN2205
2.2
47
RN2206
4.7
47
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
RN2201~2206
RN2201~2204
RN2205, 2206
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Rating
Unit
VCBO
−50
V
VCEO
−50
V
−10
VEBO
−5
V
IC
RN2201~2206
―
―
2-4E1A
−100
mA
PC
300
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
