ET190
FUJI POWER TRANSISTOR
TRIPLE DIFFUSED PLANER TYPE
HIGH VOLTAGE, SWITCHING
Outline Drawings
TO-3P
Features
High D.C. current gain
High reliability
Applications
Switching regulators
General purpose power amplifiers
JEDEC
EIAJ
種
機
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitterr-Base voltage
Collector current
Base current
Collector power disspation
Operating junction temperature
Storage temperature
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
IC
IB
PC
Tj
Tstg
Rating
600
600
450
6
8
1
80
+150
-55 to +150
型
廃
Di
ct.
u
Unit
V
V
V
V
A
A
W
°C
°C
d
e
nu
i
t
con
s
SC-65
rod
p
Electrical characteristics (Tc =25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Base leakage current
Emitter-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
*1
Switching time
Symbol
VCBO
VCEO
VCEO(SUS)
VEBO
ICBO
IEBO
hFE
VCE(Sat)
VBE(Sat)
ton
tstg
tf
Test Conditions
ICBO = 1mA
ICEO = 1mA
IC = 100mA
IEBO = 200mA
VCBO = 600V
VEBO = 6V
IC = 5A, VCE = 5V
IC = 5A, IB = 0.1A
Min.
Typ.
Max.
Units
1.0
200
V
V
V
V
mA
mA
1.2
1.8
1.5
15
1.5
V
V
µs
µs
µs
Max.
Units
1.5
°C/W
600
600
450
6
200
IC = 5A, IB1 = 0.1A
IB2 = -0.1A, RL = 50Ω
Pw = 20µs, Duty=<2%
Thermalcharacteristics
Item
Thermal resistance
Symbol
Rth(j-c)
Test Conditions
Junctionl to case
Min.
Typ.
1
