SEMICONDUCTOR
KTA1024
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
HIGH VOLTAGE APPLICATION.
B
FEATURES
D
High Voltage : VCEO=-150V.
A
Low Output Capacitance : Cob=5.0pF(Max.).
High Transition Frequency : fT=120MHz (Typ.).
DIM
A
B
C
D
Complementary to KTC3206.
G
C
S
Q
R
J
K
F
MAXIMUM RATING (Ta=25 )
SYMBOL
RATING
H
UNIT
H
E
M
-150
VCEO
Collector-Emitter Voltage
-150
V
V
1
O
VCBO
Collector-Base Voltage
H
M
N
VEBO
-5
V
Collector Current
IC
-50
mA
Emitter Current
IE
50
IB
-5
PC
1
Tj
25
1.25
Φ1.50
0.10 MAX
_
12.50 + 0.50
1.00
P
Q
R
S
150
Tstg
1.15 MAX
1.27
1.70 MAX
0.55 MAX
_
14.00 + 0.50
0.35 MIN
_
0.75 + 0.10
4
W
Junction Temperature
H
L
N
mA
Collector Power Dissipation
3
E
F
G
H
J
K
L
M
mA
Base Current
2
D
CHARACTERISTIC
F
MILLIMETERS
7.20 MAX
5.20 MAX
0.60 MAX
2.50 MAX
N
O
P
DEPTH:0.2
-55 150
Emitter-Base Voltage
1. EMITTER
2. COLLECTOR
3. BASE
Storage Temperature Range
TO-92L
ELECTRICAL CHARACTERISTICS (Ta=25°… )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-150V, IE=0
-
-
-0.1
A
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-0.1
A
hFE(Note)
VCE=-5V, IC=-10mA
70
-
240
VCE(sat)
IC=-10mA, IB=-1mA
-
-
-0.8
V
Base-Emitter Voltage
VBE
VCE=-5V, IC=-30mA
-
-
-0.9
V
Transition Frequency
fT
VCE=-30V, IC=-10mA
-
120
-
MHz
VCB=-10V, IE=0, f=1MHz
-
4.0
5.0
pF
DC Current Gain
Collector-Emitter Saturation Voltage
Cob
Collector Output Capacitance
Note : hFE Classification
2007. 3. 28
O:70 140,
Y:120
Revision No : 2
240
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