TECHNICAL DATA
NPN LOW POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/181
Devices
Qualified Level
JAN
JANTX
JANTXV
2N1613
2N1613L
2N718A
MAXIMUM RATINGS
Ratings
Symbol
Value
Unit
VCEO
VCBO
VEBO
IC
30
75
7.0
500
Vdc
Vdc
Vdc
mAdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +250C (1)
2N718A
2N1613, L
@ TC = +250C (2)
2N718A
2N1613, L
Operating & Storage Junction Temperature Range
TJ, Tstg
0.5
0.8
1.8
3.0
-55 to +175
Symbol
Max.
PT
W
0
C
TO-39 (TO-205AD)*
2N1613
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
TO-18 (TO-206AA)*
2N718A
Unit
0
2N718A
97
C/W
RθJC
2N1613, L
58
1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C
2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C
TO-5*
2N1613L
*See appendix A for package
outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 30 mAdc
Collector-Emitter Breakdown Voltage
IC = 10 mAdc, RBE = 10 Ω
Collector-Base Cutoff Current
VCB= 60 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
V(BR)CEO
V(BR)CER
Vdc
30
50
Vdc
ICBO
10
ηAdc
IEBO
10
ηAdc
120101
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