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2SB1169
2SB1169 Transistors Si PNP Power BJT Military/High-RelN V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)200u× @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)1 @I(B) (A) (Test Condition)125m h(FE) Min. Current gain.40 h(FE) Max. Current gain.450 @I(C) (A) (Test Condition)200m @V(CE) (V) (Test Condition)4 f(T) Min. (Hz) Transition Freq40MÂ @I(C) (A) (Test Condition)100m @V(CE) (V) (Test Condition)10 t(d) Max. (s) Delay time. t(r) Max. (s) Rise time t(on) Max. (s) On time..5uÂ
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