TPCC8067-H
MOSFETs
Silicon N-Channel MOS (U-MOS-H)
TPCC8067-H
1. Applications
•
High-Efficiency DC-DC Converters
•
Notebook PCs
•
Mobile Handsets
2. Features
(1)
Small, thin package
(2)
High-speed switching
(3)
Small gate charge: QSW = 1.9 nC (typ.)
(4)
Low drain-source on-resistance: RDS(ON) = 26 mΩ (typ.) (VGS = 4.5 V)
(5)
Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6)
Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TSON Advance
25
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Gate-source voltage
Unit
VDSS
Drain-source voltage
Rating
30
V
VGSS
ID
9
(Note 1)
IDP
27
PD
Drain current (pulsed)
±20
(Note 1)
Drain current (DC)
15
W
A
Power dissipation
(Tc = 25)
Power dissipation
(t = 10 s)
(Note 2)
PD
1.9
W
Power dissipation
(t = 10 s)
(Note 3)
PD
0.7
W
(Note 4)
EAS
21
mJ
IAR
9
A
Single-pulse avalanche energy
Avalanche current
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1
2011-01
2014-02-17
Rev.3.0
