2SC6142
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SC6142
１．５±０．２
Unit: mm
６．５±０．２
５．２±０．２
High collector breakdown voltage: VCES = 800 V, VCEO = 375 V
２．３
Symbol
Unit
VCBO
Collector-base voltage
Rating
800
V
VCES
800
375
8
IC
1.5
Pulse
ICP
3
Base current
IB
0.75
Collector power dissipation
PC
Junction temperature
Tj
Tstg
−55 to 150
１．1 MAX．
V
DC
２
０．８ MAX．
V
VEBO
２．３
V
VCEO
１
０．６ MAX
３
２．３±０．２
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
１．１±０．２
０．９
５．７
•
１．６
Excellent switching times: tf = 0.15 μs (typ.)
４．１±０．２
•
０．６ MAX．
５．５±０．２
○ High Voltage Switching Applications
○ Switching Regulator Applications
○ DC-DC Converter Applications
０．６±０．１５
０．６±０．１５
°C
Collector-emitter voltage
Emitter-base voltage
Collector current
Storage temperature range
A
1. BASE
2. COLLECTOR
3. EMITTER
JEDEC
⎯
A
JEITA
⎯
1.1
W
TOSHIBA
150
°C
2-7J2A
Weight: 0.32 g (typ.)
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-04-23
