TK12A50D5
MOSFETs
Silicon N-Channel MOS (π-MOS)
TK12A50D5
1. Applications
•
Switching Voltage Regulators
2. Features
(1)
Fast reverse recovery time: trrf = 50 ns (typ.), trr = 120 ns (typ.)
(2)
Low drain-source on-resistance: RDS(ON) = 0.5 Ω (typ.)
(3)
High forward transfer admittance: |Yfs| = 9.0 S (typ.)
(4)
Low leakage current: IDSS = 10 µA (max) (VDS = 500 V)
(5)
Enhancement mode: Vth = 2.5 to 4.5 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
1: Gate
2: Drain
3: Source
TO-220SIS
25
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Gate-source voltage
VGSS
±30
(Note 1)
ID
12
(Note 1)
IDP
48
PD
45
W
(Note 2)
EAS
364
mJ
IAR
12
A
(Note 3)
EAR
4.5
mJ
Drain current (DC)
Drain current (pulsed)
Power dissipation
(t = 1 ms)
(Tc = 25)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy
A
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-12-01
Rev.1.0
