2SC6040
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6040
High-Speed and High-Voltage Switching Applications
Switching Regulator Applications
Unit: mm
DC-DC Converter Applications
•
High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A)
•
High breakdown voltage: VCES = 800 V, VCEO = 410 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
800
V
Collector-emitter voltage
VCES
800
V
Collector-emitter voltage
VCEO
410
V
Emitter-base voltage
VEBO
8
V
IC
1.0
ICP
2.0
IB
0.5
A
PC
1.0
W
Tj
150
°C
Tstg
−55 to 150
°C
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Junction temperature
Storage temperature range
1. Base
2. Collector
3. Emitter
A
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2006-11-13
