FDG314P
Digital FET, P-Channel
General Description
Features
This P-Channel enhancement mode field effect
transistor is produced using Fairchild Semiconductor’s
proprietary, high cell density, DMOS technology. This
very high density process is tailored to minimize onstate resistance at low gate drive conditions. This
device is designed especially for battery power
applications such as notebook computers and cellular
phones. This device has excellent on-state resistance
even at gate drive voltages as low as 2.5 volts.
•
-0.65 A, -25 V. RDS(ON) = 1.1 Ω @ VGS = -4.5 V
RDS(ON) = 1.5 Ω @ VGS = -2.7 V.
Very low gate drive requirements allowing direct
operation in 3V cirucuits (VGS(th) <1.5 V).
•
Gate-Source Zener for ESD ruggedness
(>6 kV Human Body Model).
•
Applications
• Power Management
• Load switch
• Signal switch
•
Compact industry standard SC70-6 surface mount
package.
S
1
6
2
D
5
3
4
D
SC70-6
D
D
G
Absolute Maximum Ratings
Symbol
T A = 25°C unless otherwise noted
Parameter
Ratings
Units
-25
V
V
A
W
V DSS
Drain-Source Voltage
V GSS
ID
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
±8
-0.65
-1.8
PD
Power Dissipation for Single Operation
(Note 1a)
0.75
(Note 1b)
0.48
T J, T stg
ESD
Operating and Storage Junction Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf/1500 Ohm)
-55 to +150
6.0
°C
kV
Thermal Characteristics
R θJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
260
°C/W
Package Marking and Ordering Information
Device Marking
.14
2000 Fairchild Semiconductor International
Device
Reel Size
Tape Width
Quantity
FDG314P
7’’
8mm
3000 units
FDG314P Rev.C
FDG314P
July 2000
FDG314P
Typical Characteristics
2
2
-3.5V
-4.0V
-ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-3.0V
1.6
-2.7V
1.2
-2.5V
0.8
-2.0V
0.4
-1.5V
1.8
1.6
VGS = -2.5V
-2.7V
1.4
-3.0V
-3.5V
1.2
-4.0V
-4.5V
1
0.8
0
0
1
2
3
4
0
5
0.4
1.6
2
2.8
1.6
ID = -0.5A
VGS = -4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.2
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
-50
ID = -0.33A
2.4
2
1.6
TA = 125oC
1.2
0.8
TA = 25oC
0.4
0
-25
0
25
50
75
100
125
150
1
2
TJ, JUNCTION TEMPERATURE (oC)
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
1.2
o
-IS, REVERSE DRAIN CURRENT (A)
TA = -55 C
VDS = -5V
o
25 C
-ID, DRAIN CURRENT (A)
0.8
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
o
0.9
125 C
0.6
0.3
0
VGS = 0V
1
o
TA = 125 C
o
0.1
25 C
-55oC
0.01
0.001
0.0001
0
1
2
3
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current and
Temperature.
FDG314P Rev.C
