FDG315N
N-Channel Logic Level PowerTrench MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior switching
performance.
•
RDS(ON) = 0.16 Ω @ VGS = 4.5 V.
Applications
•
Low gate charge (2.1nC typical).
•
High performance trench technology for extremely low
RDS(ON).
•
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
•
•
•
2 A, 30 V. RDS(ON) = 0.12 Ω @ VGS = 10 V
Compact industry standard SC70-6 surface mount
package.
DC/DC converter
Load switch
Power Management
S
1
6
2
D
5
3
4
D
SC70-6
D
D
G
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
Ratings
VDSS
Drain-Source Voltage
VGSS
ID
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Units
30
±20
2
6
V
0.75
W
0.48
-55 to +150
°C
260
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
V
A
Package Marking and Ordering Information
Device Marking
.15
2000 Fairchild Semiconductor International
Device
Reel Size
Tape Width
Quantity
FDG315N
7’’
8mm
3000 units
FDG315N Rev. C
FDG315N
July 2000
FDG315N
Typical Characteristics
2
VGS = 10V
4.5V
6.0V
8
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN-SOURCE CURRENT (A)
10
4.0V
5.0V
6
3.5V
4
3.0V
2
0
1.8
V GS = 3.5V
1.6
4.0V
1.4
4.5V
5.0V
1.2
6.0V
8.0V
1
0.8
0
1
2
3
4
0
2
4
VDS, DRAIN-SOURCE VOLTAGE (V)
8
10
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.35
1.6
ID = 1A
ID = 2A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
I D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
0.3
0.25
0.2
TA = 125oC
0.15
0.1
TA = 25oC
0.05
0
-50
-25
0
25
50
75
100
125
150
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
10
T A = -55oC
25oC
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
o
ID, DRAIN CURRENT (A)
10V
125 C
8
6
4
2
V GS = 0V
1
TA = 125oC
25oC
0.1
-55 oC
0.01
0.001
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0.2
0.4
0.6
0.8
1
1.2
V SD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDG315N Rev. C
