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FDG326P

製品説明
仕様・特性

FDG326P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –1.5 A, –20 V. Applications • Low gate charge • Battery management • High performance trench technology for extremely low RDS(ON) • Load switch RDS(ON) = 140 mΩ @ VGS = –4.5 V RDS(ON) = 180 mΩ @ VGS = –2.5 V RDS(ON) = 250 mΩ @ VGS = –1.8 V • Compact industry standard SC70-6 surface mount package 1 6 2 5 3 4 SC70-6 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current –1.5 A – Continuous (Note 1a) – Pulsed PD –6 Power Dissipation for Single Operation 0.75 (Note 1b) TJ, TSTG (Note 1a) 0.48 Operating and Storage Junction Temperature Range W -55 to +150 °C 260 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient RθJA Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .26 FDG326P 7’’ 8mm 3000 units 2001 Fairchild Semiconductor Corporation FDG326P Rev D(W) FDG326P January 2001 FDG326P Typical Characteristics 2.5 VGS = -4.5V -3.0V -2.5V 5 -ID, DRAIN CURRENT (A) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 4 -2.0V 3 -1.8V 2 1 -1.5V 2.25 VGS = -1.8V 2 -2.0V 1.75 1.5 -2.5V 1.25 -3.0V -4.5V 1 0.75 0 0 0.5 1 1.5 2 0 2.5 1 2 Figure 1. On-Region Characteristics. 4 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.35 1.4 ID = -1.5A VGS = -4.5V 1.3 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 ID = -0.8 A 0.3 0.25 0.2 TA = 125oC TA = 25oC 0.15 0.1 0.05 150 1 2 3 4 5 o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 TA = -55oC VDS = -5V o 25 C 5 -ID, DRAIN CURRENT (A) -IS, REVERSE DRAIN CURRENT (A) 6 125oC 4 3 2 1 VGS = 0V 1 TA = 125oC 25oC -55oC 0.1 0.01 0.001 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG326P Rev D(W)

ブランド

FAIRCHILD

会社名

Fairchild Semiconductor International, Inc

本社国名

U.S.A

事業概要

アメリカ合衆国の半導体メーカー。世界で初めて半導体集積回路の商業生産を開始した企業である。後に同社からは様々な人材が独立、幾つかはインテルを始めとする世界的な半導体メーカーへと成長していった。

供給状況

 
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