FDG327N
20V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
• 1.5 A, 20 V.
• Fast switching speed
Applications
• Low gate charge (4.5 nC typical)
• DC/DC converter
• High performance trench technology for extremely
RDS(ON) = 90 mΩ @ VGS = 4.5 V.
RDS(ON) = 100 mΩ @ VGS = 2.5 V
RDS(ON) = 140 mΩ @ VGS = 1.8 V
• Power management
low RDS(ON)
• Load switch
• High power and current handling capability.
S
D
1
6
2
5
3
D
4
G
Pin 1
SC70-6
D
D
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Parameter
VDSS
Ratings
Units
20
Drain-Source Voltage
V
Drain Current
PD
±8
A
(Note 1a)
Power Dissipation for Single Operation
V
1.5
0.42
0.38
Gate-Source Voltage
ID
(Note 1a)
(Note 1b)
VGSS
– Continuous
– Pulsed
TJ, TSTG
6
Operating and Storage Junction Temperature Range
W
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
300
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
333
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.27
FDG327N
7’’
8mm
3000 units
©2001 Fairchild Semiconductor Corporation
FDG327N Rev C (W)
FDG327N
October 2001
FDG327N
Typical Characteristics
2
16
VGS = 4.5V
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
ID, DRAIN CURRENT (A)
3.0V
2.0V
12
1.8V
8
4
0
VGS = 1.8V
1.8
1.6
2.0V
1.4
2.5V
1.2
3.0V
3.5V
0.8
0
0.5
1
1.5
2
2.5
3
3.5
0
4
8
VDS, DRAIN-SOURCE VOLTAGE (V)
16
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.18
1.6
ID = 1.5 A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
12
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = 0.8A
0.14
0.1
TA = 125 oC
0.06
o
TA = 25 C
0.02
-50
-25
0
25
50
75
100
125
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
12
o
TA =-55 C
VGS = 0V
o
25 C
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
I D, DRAIN CURRENT (A)
4.5V
1
125oC
9
6
3
10
TA = 125oC
1
25oC
0.1
o
-55 C
0.01
0.001
0
0.0001
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG327N Rev C (W)
