FDG327NZ
20V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
• 1.5 A, 20 V.
Applications
• Low gate charge
• DC/DC converter
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 90 mΩ @ VGS = 4.5 V.
RDS(ON) = 100 mΩ @ VGS = 2.5 V
RDS(ON) = 140 mΩ @ VGS = 1.8 V
• Fast switching speed
• Power management
• Load switch
• High power and current handling capability.
S
D
D
G
Pin 1
SC70-6
D
D
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±8
ID
Drain Current
– Continuous
(Note 1a)
– Pulsed
1.5
A
6
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
0.42
W
0.38
–55 to +150
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
300
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
333
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.37
FDG327NZ
7’’
8mm
3000 units
©2008 Fairchild Semiconductor Corporation
FDG327NZ Rev C1(W)
FDG327NZ
August 2008
FDG327NZ
Typical Characteristics
1.8
VGS= 4.5V
2.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10
ID, DRAIN CURRENT (A)
1.8V
2.5V
V
8
6
1.5V
4
2
VGS=1.5V
1.6
1.8V
1.4
2.0V
1.2
2.5V
3.0V
4.5V
1
0.8
0
0
1
2
0
3
2
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
10
0.22
ID = 1.5A
VGS = 4.5V
1.4
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
8
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.5
1.3
1.2
1.1
1
0.9
0.8
0.7
ID = 0.8A
0.17
TA = 125oC
0.12
TA = 25oC
0.07
0.02
-50
-25
0
25
50
75
100
125
150
0.5
1.5
o
TJ, JUNCTION TEMPERATURE ( C)
2.5
3.5
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
TA = -55oC
o
IS, REVERSE DRAIN CURRENT (A)
VDS = 5.0V
ID, DRAIN CURRENT (A)
6
ID, DRAIN CURRENT (A)
25 C
8
o
125 C
6
4
2
VGS = 0V
1
TA = 125oC
0.1
25oC
-55oC
0.01
0.001
0.0001
0
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG327NZ Rev C1(W)
