FDG329N
20V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low RDS(ON) and gate charge (QG) in a small package.
• 1.5 A, 20 V.
RDS(ON) = 90 mΩ @ VGS = 4.5 V.
RDS(ON) = 115 mΩ @ VGS = 2.5 V
• Fast switching speed
• Low gate charge (3.3 nC typical)
Applications
• High performance trench technology for extremely
•
DC/DC converter
•
Power management
•
Load switch
low RDS(ON)
• High power and current handling capability.
S
D
1
6
2
5
3
D
4
G
Pin 1
SC70-6
D
D
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Parameter
VDSS
Ratings
Units
20
Drain-Source Voltage
V
Drain Current
PD
± 12
A
(Note 1a)
Power Dissipation for Single Operation
V
1.5
0.42
0.38
Gate-Source Voltage
ID
(Note 1a)
(Note 1b)
VGSS
– Continuous
– Pulsed
TJ, TSTG
6
Operating and Storage Junction Temperature Range
W
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
300
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
333
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.29
FDG329N
7’’
8mm
3000 units
©2001 Fairchild Semiconductor International
FDG329N Rev C (W)
FDG329N
October 2001
FDG329N
Typical Characteristics
2
12
3.0V
2.5V
R DS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 4.5V
10
3.5V
8
2.0V
6
4
2
0
0
1
2
VGS = 2.0V
1.8
1.6
1.4
2.5V
1.2
3.0V
4.5V
0.8
3
0
2
4
VDS, DRAIN TO SOURCE VOLTAGE (V)
8
10
12
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.22
ID = 1.5A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = 0.8 A
0.18
0.14
TA = 125 oC
0.1
0.06
o
TA = 25 C
0.02
-50
-25
0
25
50
75
100
125
150
1
2
o
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
100
TA = -55oC
o
25 C
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
3.5V
1
8
125oC
6
4
2
0
VGS = 0V
10
TA = 125oC
1
o
25 C
0.1
-55oC
0.01
0.001
0.0001
0.5
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG329N Rev C (W)
