FDG330P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
• –2 A, –12 V.
Applications
• Low gate charge
• Battery management
• High performance trench technology for extremely
low RDS(ON)
• Load switch
RDS(ON) = 110 mΩ @ VGS = –4.5 V
RDS(ON) = 150 mΩ @ VGS = –2.5 V
RDS(ON) = 215 mΩ @ VGS = –1.8 V
• Compact industry standard SC70-6 surface mount
package
S
1
Pin 1
D
SC70-6
D
Absolute Maximum Ratings
Symbol
3
Drain Current
Ratings
(Note 1a)
– Pulsed
PD
V
±8
– Continuous
Units
–12
Gate-Source Voltage
ID
4
TA=25oC unless otherwise noted
Drain-Source Voltage
VGSS
5
G
Parameter
VDSS
6
2
D
D
V
–2
A
–6
Power Dissipation for Single Operation
0.75
(Note 1b)
TJ, TSTG
(Note 1a)
0.48
Operating and Storage Junction Temperature Range
W
–55 to +150
°C
260
°C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.30
FDG330P
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
FDG330P Rev D (W)
FDG330P
December 2001
FDG330P
Typical Characteristics
6
3
-2.5V
-2.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS=-4.5V
-ID, DRAIN CURRENT (A)
-3.0V
-1.8V
4.5
3
-1.5V
1.5
VGS=-1.5V
2.6
2.2
1.8
-1.8V
-2.0V
1.4
-2.5V
-4.5V
0.6
0
0
0.5
1
1.5
2
0
2.5
1.5
Figure 1. On-Region Characteristics.
4.5
6
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
0.3
ID = -2.0A
VGS = -4.5V
1.3
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.2
1.1
1
0.9
0.8
0.7
ID = -1A
0.25
0.2
TA = 125oC
0.15
0.1
TA = 25oC
0.05
-50
-25
0
25
50
75
100
125
150
1
2
o
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VDS = -5V
o
TA = -55 C
4.5
-IS, REVERSE DRAIN CURRENT (A)
6
-ID, DRAIN CURRENT (A)
-3.0V
1
25oC
125oC
3
1.5
0
0.5
1
1.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
VGS = 0V
1
TA = 125oC
0.1
25oC
0.01
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG330P Rev D (W)
