FDS8333C
30V N & P-Channel PowerTrench® MOSFETs
General Description
Features
These N & P-Channel MOSFETs are
produced using Fairchild Semiconductor’s
advanced PowerTrench process that has been
especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
•
Q1
4.1 A, 30V. RDS(ON) = 80 mΩ @ V GS = 10 V
RDS(ON) = 130 mΩ @ V GS = 4.5 V
•
Q2
–3.4 A, 30V. RDS(ON) = 130 mΩ @ V GS = –10 V
RDS(ON) = 200 mΩ @ V GS = –4.5 V
These devices are well suited for low voltage
and battery powered applications where low
in-line power loss and fast switching are
required.
•
Low gate charge
•
High performance trench technology for extremely
low RDS(ON).
•
High power and handling capability in a widely used
surface mount package.
DD2
D2
D
D1
D
Q2
5
D1
D
4
6
3
Q1
SO-8
Pin 1 SO-8
2
8
1
S
Absolute Maximum Ratings
Symbol
7
G2
S2 G
G1 S
S1 S
TA=25oC unless otherwise noted
Q1
Q2
Units
V DSS
Drain-Source Voltage
Parameter
30
–30
V
V GSS
Gate-Source Voltage
±16
±20
ID
Drain Current
4.1
–3.4
20
–20
PD
– Pulsed
Power Dissipation for Dual Operation
– Continuous
(Note 1a)
2
(Note 1a)
1.6
(Note 1b)
Power Dissipation for Single Operation
1
(Note 1c)
TJ , TSTG
A
W
0.9
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJ C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS8333C
FDS8333C
7’’
12mm
2500 units
©2002 Fairchild Semiconductor Corporation
FDS8333C Rev C (W)
FDS8333C
August 2002
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ Max
Units
Drain–Source Diode Characteristics and Maximum Ratings
Drain–Source Diode Forward
Voltage
Q1
V GS = 0 V, IS = 1.3 A
(Note 2)
0.8
1.2
Q2
V GS = 0 V, IS = –1.3 A
(Note 2)
0.8
–1.2
trr
Diode Reverse Recovery
Time
Q1
Q2
IF = 4.1 A, diF/dt = 100 A/µs
IF = –3.4 A, diF/dt = 100 A/µs
16.3
14.5
nS
Qrr
Diode Reverse Recovery
Charge
Q1
Q2
IF = 4.1 A, diF/dt = 100 A/µs
IF = –3.4 A, diF/dt = 100 A/µs
26.7
21.1
nC
V SD
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b)
125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS8333C Rev C (W)
FDS8333C
Electrical Characteristics
