FDS9926A
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
Features
These N-Channel 2.5V specified MOSFETs use
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).
6.5 A, 20 V.
RDS(ON) = 30 mΩ @ VGS = 4.5 V
RDS(ON) = 43 mΩ @ VGS = 2.5 V.
• Optimized for use in battery protection circuits
• Low gate charge
Applications
• Battery protection
• Load switch
• Power management
5
6
4
3
Q1
7
8
Absolute Maximum Ratings
Symbol
2
Q2
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±10
ID
Drain Current
– Continuous
(Note 1a)
– Pulsed
PD
6.5
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
(Note 1a)
W
1.6
(Note 1b)
1
(Note 1c)
TJ, TSTG
A
20
0.9
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS9926A
FDS9926A
13’’
12mm
2500 units
©2003 Fairchild Semiconductor Corp.
FDS9926A Rev E (W)
FDS9926A
July 2003
FDS9926A
Typical Characteristics
20
2.4
VGS = 4.5V
VGS = 2.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
ID, DRAIN CURRENT (A)
16
3.5
3.0V
12
8
2.0V
4
0
0.5
1
1.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.8
1.6
2.5V
1.4
3.0V
1.2
3.5V
4.0V
4.5V
1
2
0
Figure 1. On-Region Characteristics.
5
10
ID, DIRAIN CURRENT (A)
15
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.11
1.6
ID = 6.5A
VGS = 4.5V
ID = 3.25A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2
0.8
0
1.4
1.2
1
0.8
0.6
0.09
0.07
o
TA = 125 C
0.05
0.03
TA = 25oC
0.01
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
1
150
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
o
TA = -55 C
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
o
125 C
ID, DRAIN CURRENT (A)
2.2
15
25oC
10
5
VGS = 0V
10
o
TA = 125 C
1
25oC
0.1
o
-55 C
0.01
0.001
0.0001
0
0
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS9926A Rev E (W)
