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FDT434P

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FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5 V. • Low gate charge (13nC typical) Applications • High performance trench technology for extremely low RDS(ON) . • Low Dropout Regulator • High power and current handling capability in a widely used surface mount package. • DC/DC converter • Load switch • Motor driving D D S D G G SOT-223 Absolute Maximum Ratings Symbol S D TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current –6 A – Continuous (Note 1a) – Pulsed PD –30 Power Dissipation for Single Operation (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range W 1.1 -55 to +150 °C (Note 1a) 42 °C/W (Note 1) 12 °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 434 FDT434P 13’’ 12mm 2500 units ©2011 Fairchild Semiconductor Corporation FDT434P Rev. C2 1 www.fairchildsemi.com FDT434P April 2011 FDT434P Typical Characteristics 1.8 -3.0V -2.5V 16 RDS(ON) , NORMALIZED -ID, DRAIN CURRENT (A) VGS = -4.5V 12 8 -2.0V 4 -1.5 V DRAIN-SOURCE ON-RESISTANCE 20 0 0 1 2 3 4 1.6 -3.0V 1.2 -3.5V -4.0V 0 5 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 -25 0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C) 125 150 R DS(ON) DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 15 20 0.15 ID = - 6 A VGS = - 4.5V 0.6 -50 I D = -6 A 0.12 0.09 T =125°C A 0.06 25°C 0.03 0 Figure 3. On-Resistance Variation withTemperature. 1 12 - I S, REVERSE DRAIN CURRENT (A) 15 VDS = -5V TJ = -55°C 25°C 125°C 9 6 3 1.2 1.5 1.8 2.1 2.4 -VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. ©2011 Fairchild Semiconductor Corporation FDT434P Rev. C2 2 3 4 - V GS, GATE TO SOURCE VOLTAGE (V) 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 15 - I D, DRAIN CURRENT (A) 10 - I D, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0 0.9 -4.5V 1 0.8 5 VGS = -2.5V 1.4 TJ = 125°C 1 25°C -55°C 0.1 0.01 0.001 2.7 VGS = 0V 0 0.2 0.4 0.6 0.8 1 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 www.fairchildsemi.com

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