FDT434P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
• –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V
RDS(ON) = 0.070 Ω @ VGS = –2.5 V.
• Low gate charge (13nC typical)
Applications
• High performance trench technology for extremely
low RDS(ON) .
• Low Dropout Regulator
• High power and current handling capability in a
widely used surface mount package.
• DC/DC converter
• Load switch
• Motor driving
D
D
S
D
G
G
SOT-223
Absolute Maximum Ratings
Symbol
S
D
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–6
A
– Continuous
(Note 1a)
– Pulsed
PD
–30
Power Dissipation for Single Operation
(Note 1a)
3
(Note 1b)
1.3
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
W
1.1
-55 to +150
°C
(Note 1a)
42
°C/W
(Note 1)
12
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
434
FDT434P
13’’
12mm
2500 units
©2011 Fairchild Semiconductor Corporation
FDT434P Rev. C2
1
www.fairchildsemi.com
FDT434P
April 2011
FDT434P
Typical Characteristics
1.8
-3.0V
-2.5V
16
RDS(ON) , NORMALIZED
-ID, DRAIN CURRENT (A)
VGS = -4.5V
12
8
-2.0V
4
-1.5 V
DRAIN-SOURCE ON-RESISTANCE
20
0
0
1
2
3
4
1.6
-3.0V
1.2
-3.5V
-4.0V
0
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
R DS(ON) DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
15
20
0.15
ID = - 6 A
VGS = - 4.5V
0.6
-50
I D = -6 A
0.12
0.09
T =125°C
A
0.06
25°C
0.03
0
Figure 3. On-Resistance Variation
withTemperature.
1
12
- I S, REVERSE DRAIN CURRENT (A)
15
VDS = -5V
TJ = -55°C
25°C
125°C
9
6
3
1.2
1.5
1.8
2.1
2.4
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
©2011 Fairchild Semiconductor Corporation
FDT434P Rev. C2
2
3
4
- V GS, GATE TO SOURCE VOLTAGE (V)
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
- I D, DRAIN CURRENT (A)
10
- I D, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0
0.9
-4.5V
1
0.8
5
VGS = -2.5V
1.4
TJ = 125°C
1
25°C
-55°C
0.1
0.01
0.001
2.7
VGS = 0V
0
0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
3
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