FDT458P
30V P-Channel PowerTrench® MOSFET
General Description
Features
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
• 3.4 A, –30 V. RDS(ON) = 130 mΩ @ V GS = 10 V
RDS(ON) = 200 mΩ @ V GS = 4.5 V
• Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• Low gate charge (2.5 nC typical)
Applications
• High performance trench technology for extremely
low RDS(ON)
• Battery chargers
• High power and current handling capability in a
widely used surface mount package
• Motor drives
D
D
D
D
S
S
D
G
SOT-223
G
D
SOT-223*
G
G
S
(J23Z)
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Ratings
Units
V DSS
Drain-Source Voltage
Parameter
– 30
V
V GSS
Gate-Source Voltage
±20
V
ID
Drain Current
3.4
A
– Continuous
(Note 1a)
– Pulsed
PD
10
Maximum Power Dissipation
(Note 1a)
3.0
(Note 1b)
1.3
(Note 1c)
TJ , TSTG
W
1.1
–55 to +150
°C
(Note 1a)
42
°C/W
(Note 1)
12
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
458P
FDT458P
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDT458P Rev. B(W)
FDT458P
June 2001
FDT458P
Typical Characteristics
VGS = -10V
-6.0V -5.0V
V
-4.5V
8
-ID , DRAIN CURRENT (A)
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
2
10
-4.0V
6
4
-3.5V
2
-3.0V
0
1.8
V GS=-4.5V
1.6
-5.0V
1.4
-6.0V
-7.0V
1.2
-8.0V
-10V
1
0.8
0
1
2
3
4
5
0
2
4
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
10
0.55
ID = -3.4A
VGS = -10V
ID = -1.7A
RDS(ON) ON-RESISTANCE (OHM)
,
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
8
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.7
1.5
1.3
1.1
0.9
0.7
0.45
0.35
T A = 125o C
0.25
T A = 25o C
0.15
0.05
-50
-25
0
25
50
75
100
125
150
175
2
4
T J, JUNCTION TEMPERATURE ( oC)
6
8
10
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
5
10
25o C
T A = -55oC
4
-I S, REVERSE DRAIN CURRENT (A)
V DS = -5V
-ID, DRAIN CURRENT (A)
6
-ID, DRAIN CURRENT (A)
125oC
3
2
1
0
1.5
2
2.5
3
3.5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
VGS =0V
1
TA = 125 oC
25o C
0.1
-55 oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDT458P Rev. B(W)
