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FDW2521C

製品説明
仕様・特性

FDW2521C Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Q1: N-Channel 5.5 A, 20 V. • Applications RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 35 mΩ @ VGS = 2.5 V Q2: P-Channel –3.8 A, 20 V. RDS(ON) = 43 mΩ @ VGS = –4.5 V RDS(ON) = 70 mΩ @ VGS = –2.5 V • DC/DC conversion • Power management • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package • Load switch G2 S2 S2 D2 Q1 Q2 1 2 TSSOP-8 7 3 6 4 G1 S1 S1 D1 8 5 Pin 1 Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter VDSS VGSS Drain Current - Continuous - Pulsed Power Dissipation PD (Note 1a) Q2 Units 20 Drain-Source Voltage Gate-Source Voltage ID Q1 –20 ±12 5.5 30 ±12 –3.8 –30 V V (Note 1a) 1.0 (Note 1b) A 0.6 W -55 to +150 °C (Note 1a) 125 °C/W (Note 1b) TJ, TSTG 208 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking 2521C 2008 Fairchild Semiconductor Corporation Device FDW2521C Reel Size Tape width Quantity 13’’ 12mm 2500 units FDW2521C Rev D1(W) FDW2521C July 2008 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.83 A (Note 2) VGS = 0 V, IS = –0.83 A (Note 2) Q1 Q2 Q1 Q2 0.7 –0.7 0.83 –0.83 1.2 –1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4. b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDW2521C Rev D1(W) FDW2521C Electrical Characteristics (continued)

ブランド

FAIRCHILD

会社名

Fairchild Semiconductor International, Inc

本社国名

U.S.A

事業概要

アメリカ合衆国の半導体メーカー。世界で初めて半導体集積回路の商業生産を開始した企業である。後に同社からは様々な人材が独立、幾つかはインテルを始めとする世界的な半導体メーカーへと成長していった。

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