FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
General Description
Features
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs
combining the fast switching speed of the SMPS IGBTs
along with lower gate charge and plateau voltage and avalanche capability (UIS). These LGC devices shorten delay
times, and reduce the power requirement of the gate drive.
These devices are ideally suited for high voltage switched
mode power supply applications where low conduction
loss, fast switching times and UIS capability are essential.
SMPS II LGC devices have been specially designed for:
• 100kHz Operation at 390V, 14A
•
•
•
•
•
•
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
• 200kHZ Operation at 390V, 9A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ
• Low Conduction Loss
IGBT formerly Developmental Type TA49336
Diode formerly Developmental Type TA49390
Package
Symbol
C
JEDEC STYLE TO-247
E
JEDEC STYLE TO-220AB
C
G
E
C
JEDEC STYLE TO-263AB
G
C
G
G
E
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
Ratings
600
Units
V
IC25
Collector Current Continuous, TC = 25°C
45
A
IC110
Collector Current Continuous, TC = 110°C
20
A
ICM
Collector Current Pulsed (Note 1)
108
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
60A at 600V
EAS
Pulsed Avalanche Energy, ICE = 12A, L = 2mH, VDD = 50V
150
PD
Power Dissipation Total TC = 25°C
167
W
Power Dissipation Derating TC > 25°C
1.33
W/°C
TJ
TSTG
mJ
Operating Junction Temperature Range
-55 to 150
°C
Storage Junction Temperature Range
-55 to 150
°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
July 2001
40
30
20
10
0
50
75
100
125
150
70
TJ = 150oC, RG = 10Ω, VGE = 15V, L = 100mH
60
50
40
30
20
10
0
0
100
200
TC , CASE TEMPERATURE (oC)
fMAX, OPERATING FREQUENCY (kHz)
1000
TC
75oC
VGE = 15V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
100
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.49oC/W, SEE NOTES
TJ = 125oC, RG = 3Ω, L = 200mH, V CE = 390V
10
20
10
1
30
350
VCE = 390V, RG = 10Ω, TJ = 125oC
10
300
8
250
DUTY CYCLE < 0.5%, VGE = 10V
PULSE DURATION = 250ms
14
12
10
8
6
TJ = 125oC
4
0
0.50
TJ = 25oC
0.75
1.00
1.25
1.50
1.75
2.00
2.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
©2001 Fairchild Semiconductor Corporation
ISC
tSC
6
200
4
150
2
100
9
10
11
12
13
14
15
16
Figure 4. Short Circuit Withstand Time
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
18
2
700
600
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
TJ = 150oC
500
12
ICE, COLLECTOR TO EMITTER CURRENT (A)
16
400
Figure 2. Minimum Switching Safe Operating Area
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
Figure 1. DC Collector Current vs Case
Temperature
VGE = 10V
300
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
25
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
50
18
DUTY CYCLE < 0.5%, VGE =15V
PULSE DURATION = 250ms
16
14
12
10
8
6
TJ = 150oC
TJ = 125oC
4
TJ = 25oC
2
0
.5
.75
1
1.25
1.50
1.75
2.0
2.25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D
Typical Performance Curves
