FGH60N6S2
600V, SMPS II Series N-Channel IGBT
General Description
Features
The FGH60N6S2 is a Low Gate Charge, Low Plateau Voltage SMPS II IGBT combining the fast switching speed of
the SMPS IGBTs along with lower gate charge and plateau
voltage and avalanche capability (UIS). These LGC devices
shorten delay times, and reduce the power requirement of
the gate drive. These devices are ideally suited for high voltage switched mode power supply applications where low
conduction loss, fast switching times and UIS capability are
essential. SMPS II LGC devices have been specially designed for:
• 100kHz Operation at 390V, 52A
•
•
•
•
•
•
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
• 200kHZ Operation at 390V, 31A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . 77ns at TJ = 125oC
• Low Gate Charge . . . . . . . . 140nC at VGE = 15V
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 700mJ
• Low Conduction Loss
Formerly Developmental Type TA49346.
Package
TO-247
Symbol
E
C
C
G
G
COLLECTOR
(Back-Metal)
E
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
BVCES
Parameter
Collector to Emitter Breakdown Voltage
Ratings
600
Units
V
IC25
Collector Current Continuous, TC = 25°C
75
A
IC110
Collector Current Continuous, TC = 110°C
75
A
Collector Current Pulsed (Note 1)
320
A
VGES
Gate to Emitter Voltage Continuous
±20
V
VGEM
Gate to Emitter Voltage Pulsed
±30
V
SSOA
Switching Safe Operating Area at TJ = 150°C, Figure 2
ICM
200A at 600V
EAS
Pulsed Avalanche Energy, ICE = 20A, L = 1.3mH, VDD = 50V
700
PD
Power Dissipation Total TC = 25°C
625
W
5
W/°C
Operating Junction Temperature Range
-55 to 150
°C
Storage Junction Temperature Range
-55 to 150
°C
Power Dissipation Derating TC > 25°C
TJ
TSTG
mJ
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. Pulse width limited by maximum junction temperature.
©2003 Fairchild Semiconductor Corporation
FGH60N6S2 Rev. A2
FGH60N6S2
August 2003
FGH60N6S2
Typical Performance Curves TJ = 25°C unless otherwise noted
TJ = 150oC
150
125
100
PACKAGE LIMITED
75
50
25
225
ICE, COLLECTOR TO EMITTER CURRENT (A)
TJ = 150oC, RG = 3Ω VGE = 15V, L = 100µH
,
200
175
150
125
100
75
50
25
0
0
25
50
75
100
125
150
0
100
TC , CASE TEMPERATURE (oC)
Figure 1. DC Collector Current vs Case
Temperature
400
500
VGE = 15V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
50
VGE = 10V
(DUTY FACTOR = 50%)
RØJC = 0.2oC/W, SEE NOTES
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
TC = 75oC
500
100
50
30
10
1100
VCE = 390V, RG = 3Ω, TJ = 125oC
14
1000
12
900
ISC
10
800
8
700
6
600
tSC
4
500
2
400
300
0
30
5
700
600
16
TJ = 125oC, RG = 3Ω L = 100µH, V CE = 390V
,
fMAX, OPERATING FREQUENCY (kHz)
300
Figure 2. Minimum Switching Safe Operating Area
1000
9
100
11
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
12
13
14
16
15
VGE , GATE TO EMITTER VOLTAGE (V)
Figure 3. Operating Frequency vs Collector to
Emitter Current
Figure 4. Short Circuit Withstand Time
80
80
DUTY CYCLE < 0.5%, VGE = 10V
PULSE DURATION = 250µs
70
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
200
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
175
60
50
TJ = 125oC
40
30
20
TJ =
150oC
TJ = 25oC
10
0
DUTY CYCLE < 0.5%, VGE = 15V
PULSE DURATION = 250µs
70
60
50
40
TJ = 125oC
30
TJ = 25oC
20
TJ = 150oC
10
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
©2003 Fairchild Semiconductor Corporation
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
FGH60N6S2 Rev. A2