FGL40N150D
General Description
Features
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
The FGL40N150D is designed for induction heating
applications.
•
•
•
•
High speed switching
Low saturation voltage : VCE(sat) = 3.5 V @ IC = 40A
High input impedance
Built-in fast recovery diode
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
C
G
TO-264
G
C
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
E
E
TC = 25°C unless otherwise noted
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ TC = 25°C
@ TC = 100°C
@ TC = 100°C
@ TC = 25°C
@ TC = 100°C
FGL40N150D
1500
± 25
40
20
120
10
100
200
80
-55 to +150
-55 to +150
Units
V
V
A
A
A
A
A
W
W
°C
°C
300
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
©2002 Fairchild Semiconductor Corporation
Typ.
----
Max.
0.625
0.83
25
Units
°C/W
°C/W
°C/W
FGL40N150D Rev. A1
FGL40N150D
IGBT
20V
Common Emitter
15V
T C = 25 C
100
o
TC = 25 C
8V
o
Collector Current, IC [A]
Collector Current, IC [A]
80
Common Emitter
VGE = 15V
10V
o
60
40
VGE = 6V
20
TC = 125 C
80
60
40
20
0
0
0
2
4
6
8
0
Collector - Emitter Voltage, VCE [V]
2
4
6
10
Fig 2. Typical Output Characteristics
6
5000
Common Emitter
VGE = 15V
Common Emitter
VGE =0V, f=1MHz
5
o
Tc=25 C
4000
IC = 80A
Capacitance [pF]
Collector - Emitter Voltage, VCE [V]
8
Collector - Emitter Voltage, VCE [V]
Fig 1. Typical Output Characteristics
4
IC = 40A
3
IC = 20A
2
Cies
3000
2000
Coes
1000
Cres
1
0
25
50
75
100
125
150
1
10
Collector - Emitter Voltage, VCE [V]
o
Case Temperature, TC [ C]
Fig 4. Typical Capacitance vs.
Collector to Emitter Voltage
Fig 3. Collector to Emitter Saturation
Voltage vs. Case Temperature
20
20
Common Emitter
Common Emitter
0
o
T C = 125 C
Collector - Emitter Voltage, VCE[V]
T C = 25 C
Collector - Emitter Voltage, V [V]
CE
FGL40N150D
120
100
16
12
8
80A
40A
4
20A
16
12
8
80A
40A
4
20A
0
0
0
4
8
12
16
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
©2002 Fairchild Semiconductor Corporation
20
0
4
8
12
16
20
Gate - Emitter Voltage, V GE [V]
Fig 6. Saturation Voltage vs. VGE
FGL40N150D Rev. A1
