FHC40LG
Super Low Noise HEMT
FEATURES
• Low Noise Figure: 0.3dB (Typ.)@f=4GHz
• High Associated Gain: 15.5dB (Typ.)@f=4GHz
• Lg ² 0.15µm, Wg = 280µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Available
DESCRIPTION
The FH40LG is a Super High Electron Mobility Transistor
TM
(SuperHEMT ) intended for general purpose, ultra-low noise and
high gain amplifiers in the 2-12GHz frequency range. This device is
packaged in a cost effective, low parasitic, hermetically sealed
metal-ceramic package for high volume telecommunication, DBS,
TVRO, VSAT or other low noise applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25¡C)
Item
Condition
Symbol
Rating
Unit
Drain-Source Voltage
VDS
3.5
V
Gate-Source Voltage
VGS
-3.0
V
Total Power Dissipation
Ptot
290
mW
Storage Temperature
Tstg
-65 to +175
¡C
Channel Temperature
Tch
175
¡C
Limit
Typ. Max.
Unit
Note
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with
gate resistance of 4000W.
3. The operating channel temperature (Tch) should not exceed 80¡C.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25¡C)
Item
Symbol
Saturated Drain Current
IDSS
Condition
Min.
VDS = 2V, VGS =0V
10
40
85
mA
Transconductance
gm
VDS = 2V, IDS =10mA
45
65
-
mS
Pinch-off Voltage
Vp
VDS = 2V, IDS =1mA
-0.1
-1.0
-2.0
V
IGS = -10µA
-3.0
-
-
V
0.30
0.40
dB
15.5
-
dB
Gate Source Breakdown Voltage
VGSO
Noise Figure
NF
Associated Gain
Gas
VDS = 2V, IDS = 10mA,
f = 4GHz
14.0
AVAILABLE CASE STYLES: LG
Note: RF parameters for LG devices are measured on a sample basis as follows:
1200
1201
3201
10001
Lot qty.
or
to
to
or
Edition 1.1
July 1999
less
3200
10000
over
Sample qty.
125
200
315
500
Accept/Reject
(0,1)
(0,1)
(1,2)
(1,2)
1
FHC40LG
Super Low Noise HEMT
TYPICAL NOISE FIGURE CIRCLE
+j50
+j100
+j25
Gopt
0.5
1.0
1.5
+j10
3.0dB
10
0
+j250
2.0
2.5
25
50
100
250
-j10
-j250
-j25
-j100
-j50
f=4GHz
VDS=2V
IDS=10mA
Gopt=0.87Ð57¡
Rn/50=0.18
NFmin=0.30dB
Ga(max) AND |S21| vs. FREQUENCY
NOISE PARAMETERS
VDS=2V, IDS=10MA
2
4
6
8
10
12
14
16
18
Gopt
(MAG)
(ANG)
0.86
0.87
0.86
0.81
0.74
0.63
0.49
0.33
0.13
31.0
57.0
83.0
108.0
132.0
156.0
179.0
-158.0
-136.0
20
NFmin
(dB)
Rn/50
0.28
0.30
0.34
0.39
0.47
0.55
0.67
0.81
1.00
0.19
0.18
0.13
0.09
0.05
0.03
0.04
0.07
0.11
VDS=2V
IDS=10mA
15
Gain (dB)
Freq.
(GHz)
Ga(max)
10
|S21|
5
0
4
6
8 1012 18 20
Frequency (GHz)
3
