PD - 95296
IRF7317PbF
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
Description
l
l
S1
N-CHANNEL MOSFET
1
8
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
P-CHANNEL MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
N-Ch
D1
Top View
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
P-Ch
20V
-20V
VDSS
RDS(on) 0.029Ω 0.058Ω
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA = 25°C
TA = 70°C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V DS
V GS
IDM
IS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Maximum
P-Channel
N-Channel
20
Units
-20
± 12
6.6
5.3
26
2.5
-5.3
-4.3
-21
-2.5
2.0
1.3
100
4.1
A
W
150
-2.9
0.20
mJ
A
mJ
V/ ns
5.0
-5.0
-55 to + 150 °C
Symbol
Limit
Units
RθJA
62.5
°C/W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
5/25/04