GL514/GL513F
GL514/GL513F
TO-18 Type Infrared
Emitting Diode
s Features
s Outline Dimensions
1. Output : GL514 Φ e MIN. 3.31mW at
I F = 100mA
GL513F Φ e MIN. 1.44mW at
I F = 100mA
2. Beam angle : GL514 ∆θ : TYP. ± 7˚
GL513F ∆θ : TYP. ± 50˚
3. To- 18 type standard package
4. High reliability, long operation life
GL513F
GL514
Glass lens
φ 4.7 ± 0.1
φ 4.7 ± 0.1
Glass window
GL513F
1. Optoelectronic switches
2. Smoke detectors
3. Infrared applied systems
13
13
2
φ 0.45
φ 0.45
2.5
2.5
φ 5.7MAX.
0
1.
0
˚
2
0
1
1.
1
1.
0
45
˚
2
45
Symbol
P
IF
I FM
VR
T opr
T stg
T sol
1
φ 5.7MAX.
1.
s Absolute Maximum Ratings
3.7MAX.
4.5
GL514
6.6MAX.
φ3
s Applications
Parameter
Power dissipation
Forward current
*1
Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2
Soldering temperature
( Unit : mm )
1 Cathode
( Ta = 25˚C )
Rating
250
150
2
6
- 40 to + 125
- 55 to + 125
260
2 Anode
Unit
mW
mA
A
V
˚C
˚C
˚C
*1 Pulse width<= 200 µs
Duty ratio = 0.01
*2 For 10 seconds at the position of 1.3mm from the bottom
face of can package.
s Electro-optical Characteristics
Parameter
Forward voltage
Peak forward voltage
Reverse current
Terminal capacitance
*3
GL514
GL513F
Peak emission wavelength
Half intensity wavelength
Radiant flux
Symbol
VF
V FM
IR
Ct
( Ta = 25˚C )
Conditions
I F = 100mA
I FM = 1.5A
V R = 5V
V = 0, f = 1MHz
Φe
I F = 100mA
λp
∆λ
I F = 100mA
I F = 100mA
MIN.
3.31
1.44
-
TYP.
1.35
2.75
70
5.35
2.88
950
45
MAX.
1.6
4.0
100
10.0
-
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
Unit
V
V
µA
pF
mW
mW
nm
nm
