RN2901~RN2906
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2901,RN2902,RN2903,RN2904,RN2905,RN2906
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit : mm
Including two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1901 to RN1906
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2901
4.7
4.7
RN2902
10
10
RN2903
22
22
RN2904
47
47
RN2905
2.2
47
RN2906
4.7
47
US6
―
JEDEC
―
JEITA
2-2J1A
TOSHIBA
Weight: 6.8 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Junction temperature
Storage temperature range
(Top View)
Symbol
RN2901 to 2906
RN2901 to 2904
RN2905, 2906
Collector current
Collector power dissipation
Equivalent Circuit
Rating
Unit
VCBO
−50
V
VCEO
−50
V
−10
VEBO
−5
V
IC
RN2901 to 2906
−100
mA
PC *
200
mW
Tj
150
°C
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Total rating
1
2010-07-09
RN2901~RN2906
(Q1, Q2 Common)
3
2010-07-09