YG225C8,N8,D8 (10A)
(800V / 10A)
Outline drawings, mm [0502]
FAST RECOVERY DIODE
10±0.5
ø3.2
4.5±0.2
+0.2
-0.1
2.7±0.2
15±0.3
6.3
2.7±0.2
13Min
3.7±0.2
1.2±0.2
+0.2
0.7±0.2
2.54±0.2
Features
Insulated package by fully molding
High voltage by mesa design
0.6 -0
2.7±0.2
JEDEC
EIAJ
High reliability
SC-67
Connection diagram
Applications
2
YG225C8
1
YG225N8
1
YG225D8
1
3
High speed switching
2
3
2
Maximum ratings and characteristics
3
Absolute maximum ratings
種
機
Symbol
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Conditions
VRRM
型
廃
VRSM
ct.
u
ed
rod
p
Viso
Isolating voltage
Average output current
Terminals-to-Case, AC.1min
IO
Square wave, duty=1/2, Tc=95°C
inu
nt
Operating junction temperature
800
V
850
V
1500
V
A
A
°C
-40 to +150
Tstg
10*
+150
Sine wave 10ms
Tj
Storage temperature
Unit
70
o
isc
D
IFSM
Surge current
Rating
°C
*Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Symbol
Item
Conditions
Max.
Unit
1.5
V
Forward voltage drop **
VFM
IFM=2.5A
Reverse current
IRRM
VR=VRRM
Reverse recovery time
trr
IF=0.1A, IR=0.1A, Irec=0.01A
0.4
µs
Thermal resistance
Rth(j-c)
Junction to case
3.5*
°C/W
**
Mechanical characteristics
Mounting torque
Approximate weight
50
µA
** Rating per element
Recommended torque
0.3 to 0.5
2.3
N·m
g