MITSUBISHI SEMICONDUCTOR
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DESCRIPTION
M63823P, M63823FP and M63823GP are seven-circuit
Darlington transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semi-conductor
integrated circuits perform high-current driving with extremely low input-current supply.
Production lineup has been newly expanded with the addition of 225mil (GP) package.
M63823P and M63823FP have the same pin connection as
M54523P and M54523FP. (Compatible with M54523P and
M54523FP) More over, the features of M63823P and
M63823FP are equal or superior to those of M54523P and
M54523FP.
PIN CONFIGURATION
IN1→ 1
15 →O2
IN3→ 3
14 →O3
IN4→ 4
13 →O4
IN5→ 5
12 →O5
IN6→ 6
11 →O6
IN7→ 7
INPUT
16 →O1
IN2→ 2
10 →O7
GND
9
8
OUTPUT
→COM COMMON
16P4(P)
16P2N-A(FP)
Package type 16P2S-A(GP)
FEATURES
q Three package configurations (P, FP and GP)
q Pin connection Compatible with M54523P and M54523FP
q
q
q
q
q
High breakdown voltage (BVCEO ≥ 50V)
High-current driving (IC(max) = 500mA)
With clamping diodes
PMOS Compatible input
Wide operating temperature range (Ta = –40 to +85°C)
CIRCUIT DIAGRAM
COM
OUTPUT
INPUT
2.7k
APPLICATION
Drives of relays and printers, digit drives of indication elements (LEDs and lamps), and MOS-bipolar logic IC interfaces
7.2k
3k
GND
The seven circuits share the COM and GND
FUNCTION
The M63823P, M63823FP and M63823GP each have seven
circuits consisting of NPN Darlington transistors. These ICs
have resistance of 2.7kΩ between input transistor bases and
input pins. A spike-killer clamping diode is provided between
each output pin (collector) and COM pin (pin 9). The output
transistor emitters are all connected to the GND pin (pin 8).
The collector current is 500mA maximum. Collector-emitter
supply voltage is 50V maximum.The M63823FP and
M63823GP is enclosed in molded small flat package, enabling space-saving design.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
(Unless otherwise noted, Ta = –40 ~ +85°C)
Parameter
Collector-emitter voltage
Collector current
Conditions
Output, H
Current per circuit output, L
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Unit : Ω
Ratings
–0.5 ~ +50
500
–0.5 ~ +30
500
50
Ta = 25°C, when mounted on board
1.47(P)/1.00(FP)/0.80(GP)
–40 ~ +85
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Jan. 2000
