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2SA1586GR
2SA1586 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1586 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA) = 0.95 (typ.) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SC4116 • Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −150 mA Base current IB −30 mA Collector power dissipation PC 100 mW Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C JEDEC ― JEITA SC-70 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-2E1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.006 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ⎯ ⎯ −0.1 μA Emitter cut-off current IEBO VEB = −5 V, IC = 0 ⎯ ⎯ −0.1 μA VCE = −6 V, IC = −2 mA 70 ⎯ 400 IC = −100 mA, IB = −10 mA ⎯ −0.1 −0.3 V VCE = −10 V, IC = −1 mA 80 ⎯ ⎯ MHz Cob VCB = −10 V, IE = 0, f = 1 MHz ⎯ 4 7 pF NF VCE = −6 V, IC = −0.1 mA, f = 1 kHz, Rg = 10 kΩ ⎯ 1.0 10 dB DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure hFE (Note) VCE (sat) fT Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400 ( ) marking symbol Marking 1 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター＆ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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