M29W640GH M29W640GL
M29W640GT M29W640GB
64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block)
3 V supply flash memory
Feature
Supply voltage
– VCC = 2.7 to 3.6 V for program/erase/read
– VPP =12 V for fast program (optional)
TSOP48 (NA)
12 x 20 mm
Asynchronous random/page read
– Page width: 4 words
– Page access: 25 ns
– Random access: 60 ns, 70 ns, 90 ns
TFBGA48 (ZA)
6 x 8 mm
FBGA64 (ZS)
11 x 13 mm
TBGA64 (ZF)
10 x 13 mm(1)
1. Packages only available upon request.
RoHS compliant packages
128-word extended memory block
Programming time
– 10 μs per byte/word typical
– Chip program time: 10 s (4-word program)
Low power consumption:standby and
automatic standby
Unlock Bypass Program command
– Faster production/batch programming
Memory organization
– M29W640GH/L:
128 main blocks, 64 Kbytes each
– M29W640GT/B
Eight 8-Kbyte boot blocks (top or bottom)
127 main blocks, 64 Kbytes each
Common flash interface: 64-bit security code
VPP/WP pin for fast program and write protect
Temporary block unprotection mode
100,000 program/erase cycles per block
Program/erase controller
– Embedded byte/word program algorithms
Electronic signature
– Manufacturer code: 0020h
– Device code (see Table 1)
Program/erase suspend and resume
– Read from any block during program
suspend
– Read and program another block during
erase suspend
Table 1.
FBGA
BGA
FBGA
Fast program commands
– 2-word/4-byte program (without VPP=12 V)
– 4-word/8-byte program (with VPP=12 V)
– 16-word/32-byte write buffer
TSOP56 (NB)
14 x 20 mm(1)
Automotive Certified Parts Available
Device summary
Root part number
M29W640GH: uniform, last block protected by VPP/WP
227Eh + 220Ch + 2201h
M29W640GL: uniform, first block protected by VPP/WP
227Eh + 220Ch + 2200h
M29W640GT: top boot blocks
227Eh + 2210h + 2201h
M29W640GB: bottom boot blocks
October 2009
Device code
227Eh + 2210h + 2200h
Rev 11
1/90
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