PD - 97194A
IRF7902PbF
HEXFET® Power MOSFET
Applications
l Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
Benefits
l Very Low RDS(on) at 4.5V VGS
l Low Gate Charge
l Fully Characterized Avalanche Voltage
and Current
l 20V VGS Max. Gate Rating
l Improved Body Diode Reverse Recovery
l Lead-Free
VDSS
30V
ID
RDS(on) max
Q1 22.6m:@VGS = 10V
Q2 14.4m:@VGS = 10V
B
9
T!
T ÃÃ9!
T!
T ÃÃ9!
B!
6.4A
9.7A
T ÃÃ9!
SO-8
Absolute Maximum Ratings
Parameter
VDS
VGS
I D @ TA = 25°C
I D @ TA = 70°C
I DM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Q1 Max.
Q2 Max.
Units
V
30
± 20
6.4
5.1
51
1.4
0.9
9.7
7.8
78
2.0
1.3
0.011
A
W
0.016
W/°C
°C
Q1 Max.
Q2 Max.
20
90
20
62.5
Units
°C/W
-55 to + 150
Thermal Resistance
RθJL
RθJA
www.irf.com
Parameter
Junction-to-Drain Lead
g
Junction-to-Ambient fg
1
07/10/06