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IRF7842TRPBF
IRF7842PbF Applications l Synchronous MOSFET for Notebook Processor Power l Secondary Synchronous Rectification for Isolated DC-DC Converters l Synchronous Fet for Non-Isolated DC-DC Converters l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current Base Part Number Package Type IRF7842PbF SO-8 HEXFET® Power MOSFET VDSS RDS(on) max : Qg (typ.) 40V 5.0m @VGS = 10V 33nC A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF7842PbF IRF7842TRPbF Absolute Maximum Ratings Max. Units Drain-to-Source Voltage Parameter 40 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 18 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 14 IDM Pulsed Drain Current 140 PD @TA = 25°C Power Dissipation VDS c PD @TA = 70°C f Power Dissipation f TJ Linear Derating Factor Operating Junction and TSTG A Storage Temperature Range W 2.5 1.6 W/°C °C 0.02 -55 to + 150 Thermal Resistance Parameter RθJL RθJA Notes 1 g Junction-to-Ambient fg Junction-to-Drain Lead Typ. Max. Units ––– 20 °C/W ––– 50 through are on page 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback July 8, 2014
IR
International Rectifier
U.S.A
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