HOME＞在庫検索＞在庫情報
2SB1453K
DATA SHEET SILICON TRANSISTOR 2SB1453 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1453 is a power transistor that can directly drive from PACKAGE DRAWING (UNIT: mm) the IC output. This transistor is ideal for motor drivers and solenoid drivers in such as OA and FA equipment. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • High DC current amplifier ratio hFE ≥ 100 (VCE = −5 V, IC = −0.5 A) • Mold package that does not require an insulating board or insulation bushing Electrode Connection ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° 1. Base 2. Collector Parameter Symbol Ratings Unit Collector to base voltage VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −3.0 A IC(pulse)* −6.0 A IB(DC) −1.0 A Total power dissipation PT (Tc = 25°C) 25 W Total power dissipation PT (Ta = 25°C) 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Collector current (pulse) Base current (DC) 3. Emitter * PW ≤ 10 ms, duty cycle ≤ 50% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16129EJ2V0DS00 (2nd edition) Date Published July 2002 N CP(K) Printed in Japan © 2002 1998
NEC
NECエレクトロニクスは平成14年にNECから、ルネサスは平成15年に日立製作所及び三菱電機からそれぞれ分離独立する形で設立された半導体専業企業であり両者は合併した。
RENESAS
ルネサス エレクトロニクス株式会社
日本
2010年（平成22年）4月に設立された大手半導体メーカー。半導体製品の研究開発・製造・販売・サービス。主力製品は、マイコン(CISC、RISC)、パワーデバイス、アナログ＆ミックスドシグナルIC、汎用IC、高周波デバイス、光半導体、車載用LSI、産業用LSI、メモリ、ASIC、USB ASSP、システムLSI
お買い上げ小計が１万円以上の場合は送料はサービスさせて頂きます。１万円未満の場合、また時間指定便はお客様負担となります。（送料は地域により異なります。）
