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2SA1931Q
2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT PROCESS) 2SA1931 High-Current Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC4881 Absolute Maximum Ratings (Tc = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO −60 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V Collector current IC −5 A Base current IB −1 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 2.0 20 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― SC-67 TOSHIBA 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-13
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