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部品型式

MT46H32M16LFBF-6IT:C

製品説明
仕様・特性

512Mb: x16, x32 Automotive LPDDR SDRAM Features Automotive LPDDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF – 4 Meg x 32 x 4 banks MT46H16M32LG – 4 Meg x 32 x 4 banks Features Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 32 Meg x 16 (8 Meg x 16 x 4 banks) – 16 Meg x 32 (4 Meg x 32 x 4 banks) • Addressing – JEDEC-standard addressing • Plastic "green" package – 60-ball VFBGA (8mm x 9mm) 1 – 90-ball VFBGA (8mm x 13mm) 2 – 90-ball VFBGA (8mm x 13mm) 2 • Timing – cycle time – 5ns @ CL = 3 (200 MHz) – 6ns @ CL = 3 (166 MHz) • Power – Standard IDD2/IDD6 – Low-power IDD2/IDD6 • Product certification – Automotive • Operating temperature range – Industrial (–40˚C to +85˚C) – Automotive (–40˚C to +105˚C) • Design revision • VDD/VDDQ = 1.70–1.95V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • 4 internal banks for concurrent operation • Data masks (DM) for masking write data; one mask per byte • Programmable burst lengths (BL): 2, 4, 8, or 16 • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.8V LVCMOS-compatible inputs • Temperature-compensated self refresh (TCSR) • Partial-array self refresh (PASR) • Deep power-down (DPD) • Status read register (SRR) • Selectable output drive strength (DS) • Clock stop capability • 64ms refresh, 32ms for automotive temperature Notes: Marking H 32M16 16M32 LF BF B5 BQ -5 -6 None L A IT AT :C 1. Only available for x16 configuration. 2. Only available for x32 configuration. Table 1: Key Timing Parameters (CL = 3) Speed Grade Clock Rate Access Time -5 200 MHz 5.0ns -6 166 MHz 5.0ns PDF: 09005aef846e285e t67m_embedded_lpddr_512mb.pdf - Rev. D 2/14 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.

ブランド

MICRON

会社名

Micron Technology

本社国名

U.S.A

事業概要

メモリ・ストレージ用の各種半導体メモリ(DRAMやフラッシュメモリとそれらの搭載製品群)を製造・販売している。主力製品は、DRAM, FLASH MEMORY

供給状況

 
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