MPS6520
MPS6521
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPS6520 and
MPS6521 are silicon NPN epitaxial transistors designed
for complementary amplifier applications requiring
low noise and high DC current gains. The PNP
complementary devices are MPS6522 and MPS6523
respectively.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
SYMBOL
VCBO
VCEO
Emitter-Base Voltage
Operating and Storage Junction Temperature
PD
TJ, Tstg
UNITS
V
25
V
4.0
VEBO
IC
Continuous Collector Current
Power Dissipation
40
V
100
mA
625
mW
-65 to +150
°C
ELECTRICAL
SYMBOL
ICBO
ICBO
CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
TYP
VCB=30V
VCB=30V, TA=60°C
BVCEO
IC=500μA
25
BVEBO
IE=10μA
4.0
VCE(SAT)
IC=50mA, IB=5.0mA
VCE=10V, IC=2.0mA
fT
fT
Cob
NF
SYMBOL
hFE
hFE
MAX
50
UNITS
nA
1.0
μA
V
V
0.5
300
VCE=10V, IC=10mA
VCB=10V, IE=0, f=100kHz
V
MHz
400
MHz
3.5
pF
3.0
VCE=5.0V, IC=10μA,
RS=10KΩ, BW=15.7kHz,
3.0dB points @ 10Hz and 10kHz
dB
TEST CONDITIONS
VCE=10V, IC=100μA
MPS6520
MIN
MAX
100
-
MPS6521
MIN
MAX
150
-
VCE=10V, IC=2.0mA
200
300
400
600
R1 (11-November 2014)
