• 1N6638US,1N6642US, 1N6643US AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
• 1N6638U,1N6642U, 1N6643U AVAILABLE IN JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/578
1N6638U & US
1N6642U & US
1N6643U & US
• SWITCHING DIODES
• NON-CAVITY GLASS PACKAGE
• METALLURGICALLY BONDED
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Operating Current: 300 mA
Derating: 4.6 mA/°C Above TEC = + 110°C
Surge Current: IFSM = 2.5A, half sine wave, Pw = 8.3ms
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
V BR
TYPES
V RWM
@ IR
=100 µA
V F1
V F2
@ I F2
tfr
(Pulsed)
IR = 10 mA
IF = 10 mA
=50 mA
(Pulsed)
trr
IF
IFM
=10 mA
IREC = 1 mA
V (pk)
1N6638U & US
1N6642U & US
1N6643U & US
V (pk)
V dc
V dc
mA
ns
125
75
50
0.8
1.0
1.0
1.1
1.2
1.2
200
100
100
20
20
20
4.5
5.0
6.0
MILLIMETERS
MIN
MAX
1.78
2.16
0.48
0.71
4.19
4.95
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
FIGURE 1
ns
150
100
75
DIM
D
F
G
S
DESIGN DATA
CASE: D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/578
LEAD FINISH: Tin / Lead
I R1
I R2
I R3
I R4
C T1
C T2
VR
= 20 V
@V R
= V RWM
V R = 20 V
TA = 150°C
V R = V RWM
TA = 150°C
VR=
0V
VR=
1.5V
nA dc
µA dc
µA dc
µA dc
pF
pF
35
25
50
0.5
0.5
0.5
50
50
75
100
100
160
2.5
5.0
5.0
2.0
2.8
2.8
TYPES
1N6638U & US
1N6642U & US
1N6643U & US
THERMAL RESISTANCE: (ROJEC):
50 °C/W maximum at L = 0
THERMAL IMPEDANCE: (ZOJX): 25
°C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
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PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
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